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2SJ452 PDF预览

2SJ452

更新时间: 2024-02-05 12:47:28
品牌 Logo 应用领域
TYSEMI 开关
页数 文件大小 规格书
2页 160K
描述
Low frequency power switching

2SJ452 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29配置:SINGLE
最小漏源击穿电压:50 V最大漏极电流 (ID):0.2 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ452 数据手册

 浏览型号2SJ452的Datasheet PDF文件第1页 
Product specification  
2SJ452  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
–50  
Unit  
Drain to source voltage  
Gate to source voltage  
Drain current  
V
VGSS  
±20  
V
ID  
–0.2  
A
1
Drain peak current  
Channel dissipation  
Channel temperature  
Storage temperature  
ID(pulse)  
Pch  
*
–0.4  
A
150  
mW  
°C  
°C  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW 10 µs, duty cycle 1%  
Marking is "ZM–".  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
–50  
V
ID = –100 µA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
±20  
V
IG = ±100 µA, VDS = 0  
Zero gate voltage drain current IDSS  
5.0  
–1.0  
±2.0  
–1.5  
7.0  
µA  
µA  
V
VDS = –40 V, VGS = 0  
VGS = ±16 V, VDS = 0  
ID = –10 µA, VDS = –5 V  
ID = –100 mA  
Gate to source leak current  
Gate to source cutoff voltage  
IGSS  
VGS(off)  
–0.5  
Static drain to source on state RDS(on)  
resistance  
1
V
GS = –4 V*1  
ID = –40 mA  
GS = –2.5 V*1  
Static drain to source on state RDS(on)  
resistance  
2
7.5  
12.0  
V
Foward transfer admittance  
|yfs|  
0.1  
0.19  
S
ID = –100 mA*1  
VDS = –10 V  
Input capacitance  
Output capacitance  
Ciss  
1.1  
pF  
pF  
pF  
µs  
µs  
µs  
µs  
VDS = –10 V  
VGS = 0  
Coss  
15.7  
0.12  
0.45  
1.3  
Reverse transfer capacitance Crss  
f = 1 MHz  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
VGS = –10 V, ID = –0.1 A  
RL = 300 Ω  
Turn-off delay tiem  
Fall time  
8.4  
5.6  
2 of 2  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  

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