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2SJ438(F) PDF预览

2SJ438(F)

更新时间: 2024-01-19 05:27:52
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 409K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,5A I(D),TO-220AB

2SJ438(F) 技术参数

是否Rohs认证: 符合生命周期:Lifetime Buy
包装说明:,Reach Compliance Code:unknown
风险等级:5.61配置:Single
最大漏极电流 (Abs) (ID):5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):25 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SJ438(F) 数据手册

 浏览型号2SJ438(F)的Datasheet PDF文件第1页浏览型号2SJ438(F)的Datasheet PDF文件第2页浏览型号2SJ438(F)的Datasheet PDF文件第3页浏览型号2SJ438(F)的Datasheet PDF文件第5页浏览型号2SJ438(F)的Datasheet PDF文件第6页 
2SJ438  
4
2009-09-29  

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