Datasheet > 2SJ333L

2SJ333L

更新时间： 2024-11-08 23:20:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
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7页	42K
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2SJ333L 数据手册

2SJ333 L , 2SJ333 S

Silicon P-Channel MOS FET

Application

DPAK–1

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

2, 4

• 4 V Gate drive device can be driven from 5 V

Source

• Suitable for Switching regulator, DC – DC

converter

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

–30

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

–7

———————————————————————————————————————————

Drain peak current

–28

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

–7

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25°C

12 3 4 5 6 7

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