Datasheet > 2SJ338-Y(TE16R1)

2SJ338-Y(TE16R1)

更新时间： 2024-01-08 05:00:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	119K
描述
TRANSISTOR,MOSFET,P-CHANNEL,180V V(BR)DSS,1A I(D),TO-252

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技术参数
数据手册

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2SJ338-Y(TE16R1) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	配置：	Single
最大漏极电流 (Abs) (ID)：	1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SJ338-Y(TE16R1) 数据手册

2SJ338

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

2SJ338

Audio-Frequency Power Amplifier Applications

Unit: mm

6.5 ± 0.2

5.2 ± 0.2

0.6 MAX.

z High breakdown voltage

: V

= −180 V

DSS

z High forward transfer admittance

z Complementary to 2SK2162

: |Y | = 0.7 S (typ.)

1.1 ± 0.2

0.8 MAX.

0.6 MAX.

1.05 MAX.

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

−180

±20

DSS

Gate-source voltage

Drain current

GSS

2.3 ± 0.15

(Note 1)

−1

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURCE

Drain power dissipation (Tc = 25°C)

Channel temperature

°C

stg

150

JEDEC

―

Storage temperature range

−55 to 150

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

TOSHIBA

2-7J1B

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 0.36 g (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2010-01-05

12 3

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