Datasheet > 2SJ342_07

2SJ342_07

更新时间： 2024-09-25 03:45:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	571K
描述
High Speed Switching, Analog Switch Applications

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中文翻译

获取价格

数据手册

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2SJ342_07 数据手册

2SJ342

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ342

High Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Low threshold voltage: V = −0.8~−2.5 V

High speed

Enhancement-mode

Small package

Complementary to 2SK1825

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

JEDEC

JEITA

―

−50

−7

Gate-source voltage

DC drain current

GSS

−50

°C

TOSHIBA

2-4E1E

Drain power dissipation

Channel temperature

Storage temperature range

300

stg

Weight: 0.13 g (typ.)

150

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

= −7 V, V = 0

Min

Typ.

Max

Unit

⎯

−50

⎯

−1

⎯

μA

GSS

Drain-source breakdown voltage

Drain cut-off current

= −100 μA, V

= 0

(BR) DSS

= −50 V, V

⎯

−1

−2.5

⎯

μA

DSS

Gate threshould voltage

Forward transfer admittance

Drain-source ON resistance

Input capacitance

= −5 V, I = −0.1 mA

−0.8

⎯

⎪Y ⎪

= −5 V, I = −10 mA

⎯

= −10 mA, V = −4 V

⎯

DS (ON)

= −5 V, V

= 0, f = 1 MHz

⎯

10.5

1.9

7.2

0.15

0.13

iss

rss

oss

Reverse transfer capacitance

Output capacitance

⎯

Turn-on time

Switching time

⎯

= −5 V, I = −10 mA,

μs

= 0~−4 V

Turn-off time

⎯

off

2007-11-01

12 3 4 5

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