2SJ338-O

更新时间： 2024-02-15 11:18:57

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
3页	126K
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2SJ338-O 数据手册

2SJ338

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

2SJ338

Audio-Frequency Power Amplifier Applications

Unit: mm

z High breakdown voltage

: V

= −180 V

DSS

z High forward transfer admittance

z Complementary to 2SK2162

: |Y | = 0.7 S (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

−180

±20

DSS

Gate−source voltage

Drain current

GSS

(Note 1)

−1

Power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

°C

stg

150

−55~150

JEDEC

JEITA

―

Note 1: Ensure that the channel temperature does not exceed 150°C.

SC-64

Note 2: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)

temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

JEDEC

―

JEITA

SC-64

2-7J1B

TOSHIBA

Weight: 0.36 g (typ.)

2006-11-16

12 3

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