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2SJ181S PDF预览

2SJ181S

更新时间: 2024-02-06 20:21:31
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 87K
描述
Silicon P Channel MOS FET

2SJ181S 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):0.5 A
最大漏极电流 (ID):0.5 A最大漏源导通电阻:25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):1 A子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ181S 数据手册

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