生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 160 V |
最大漏极电流 (ID): | 8 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 100 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ115-Y | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 160 V, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SJ116 | HITACHI |
获取价格 |
SILICON P-CHANNEL MOS FET | |
2SJ116 | NJSEMI |
获取价格 |
SILICON P-CHANNEL MOS FET | |
2SJ117 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ118 | ETC |
获取价格 |
SILICON P-CHANNEL MOS FET | |
2SJ119 | ETC |
获取价格 |
SILICON P-CHANNEL MOS FET | |
2SJ120L | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 2A I(D) | TO-252VAR | |
2SJ120S | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 2A I(D) | TO-252VAR | |
2SJ122 | ETC |
获取价格 |
TRANSISTOR TO 220 MOSFET P KANAL | |
2SJ123 | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 70 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power |