是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 2 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 20 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ128-Z-T1 | NEC |
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Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-o | |
2SJ130 | HITACHI |
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Silicon P-Channel MOS FET | |
2SJ130 | RENESAS |
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Silicon P Channel MOS FET | |
2SJ130(L) | HITACHI |
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暂无描述 | |
2SJ130(L) | RENESAS |
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1A, 300V, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
2SJ130(L)-(1) | RENESAS |
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TRANSISTOR,MOSFET,P-CHANNEL,300V V(BR)DSS,1A I(D),TO-251 | |
2SJ130(L)|2SJ130(S) | ETC |
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||
2SJ130(S) | HITACHI |
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暂无描述 | |
2SJ130(S) | RENESAS |
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1A, 300V, 8.5ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
2SJ130(S)-(1) | RENESAS |
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Transistor |