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2SD874A PDF预览

2SD874A

更新时间: 2024-11-05 07:31:55
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
2页 572K
描述
TRANSISTOR (NPN)

2SD874A 数据手册

 浏览型号2SD874A的Datasheet PDF文件第2页 
2SD874A  
TRANSISTOR (NPN)  
FEATURES  
SOT-89  
1. BASE  
z
Large collector power dissipation PC  
z
z
Low collector-emitter saturation voltage VCE(sat)  
Complementary to 2SB766A  
2. COLLECTOR  
3. EMITTER  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
1
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Units  
2
60  
V
3
50  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
1
A
PC  
0.5  
W
TJ  
150  
-55-150  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
60  
50  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=10μA,IE=0  
V(BR)CEO IC=2mA,IB=0  
V(BR)EBO IE=10μA,IC=0  
V
V
ICBO  
IEBO  
VCB=20V,IE=0  
0.1  
0.1  
μA  
μA  
Emitter cut-off current  
VEB=4V,IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=10V,IC=500mA  
VCE=5V,IC=1A  
85  
50  
340  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=500mA,IB=50mA  
IC=500mA,IB=50mA  
VCE=10V,IC=50mA,f=200MHz  
VCB=10V,IE=0,f=1MHz  
0.4  
1.2  
V
V
200  
20  
MHz  
pF  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
Rank  
Q
R
S
Range  
85-170  
YQ  
120-240  
YR  
170-340  
YS  
Marking  
1
JinYu  
semiconductor  
www.htsemi.com  

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