SMD Type
Transistors
NPN Transistors
2SD874A-HF
■ Features
1.70 0.1
● Large collector power dissipation P
C
● Low collector-emitter saturation voltage VCE(sat)
● Complimentary to 2SB766A-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
0.42 0.1
0.46 0.1
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
60
V
Collector - Emitter Voltage
Emitter - Base Voltage
50
5
1
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
A
P
C
500
mW
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 2 mA, I = 0
= 100μA, I
Min
60
50
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
= 0
I
CBO
EBO
V
V
CB= 50 V , I
EB= 4V , I
E
= 0
100
100
0.4
nA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=500 mA, I
B
=50mA
=50mA
V
C=500 mA, I
B
1.2
h
FE(1)
FE(2)
V
V
V
V
CE= 10V, I
CE= 5V, I = 1A
= 0,f=1MHz
= 50mA,f=200MHz
C
= 500mA
85
50
340
DC current gain
h
C
Collector output capacitance
Transition frequency
C
ob
CB= 10V, I
CE= 10V, I
E
20
pF
f
T
C
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD874A-Q-HF 2SD874A-R-HF 2SD874A-S-HF
85-170 120-240 170-340
YQ YR YS
F
F
F
1
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