Datasheet > 2SD874A-S

2SD874A-S

更新时间： 2024-11-06 00:58:03

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1232K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD874A-S 数据手册

SMD Type

Transistors

NPN Transistors

2SD874A

■ Features

1.70 0.1

● Large collector power dissipation P

● Low collector-emitter saturation voltage VCE(sat)

● Complimentary to 2SB766A

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 2 mA， I = 0

= 100μA， I

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

CB= 50 V , I

EB= 4V , I

= 0

100

0.4

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=500 mA, I

=50mA

C=500 mA, I

1.2

FE(1)

FE(2)

CE= 10V, I

CE= 5V, I = 1A

= 0,f=1MHz

= 50mA,f=200MHz

= 500mA

340

DC current gain

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 10V, I

200

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD874A-Q

85-170

2SD874A-R

120-240

2SD874A-S

170-340

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