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2SD874A PDF预览

2SD874A

更新时间: 2024-11-05 07:31:55
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 463K
描述
NPN Plastic Encapsulated Transistor

2SD874A 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.46Is Samacsys:N
Base Number Matches:1

2SD874A 数据手册

 浏览型号2SD874A的Datasheet PDF文件第2页 
2SD874A  
1A , 60V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-89  
FEATURES  
Large collector power dissipation PC  
Low collector-emitter saturation voltage VCE(sat)  
Complementary to 2SB766A  
4
1
2
C
3
E
B
A
E
CLASSIFICATION OF hFE (1)  
C
Product-Rank  
2SD874A-Q  
85~170  
YQ  
2SD874A-R  
120~240  
YR  
2SD874A-S  
170~340  
YS  
B
D
K
Range  
F
G
H
Marking  
J
L
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
A
B
C
D
4.40  
3.94  
1.40  
2.30  
G
H
J
0.40  
0.58  
1.50 TYP  
3.00 TYP  
K
0.32  
0.35  
0.52  
0.44  
E
F
1.50  
0.89  
1.70  
1.20  
L
Collector  
  
  
Base  
  
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Power Dissipation  
Junction & Storage Temperature  
VCBO  
VCEO  
VEBO  
IC  
PC  
TJ, TSTG  
60  
50  
5
1
V
V
V
A
mW  
°C  
500  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage V(BR)CBO  
Collector-Emitter Breakdown  
Emitter-Base Breakdown Boltage  
Collector Cut-Off Current  
Symbol  
Min.  
Typ.  
-
-
-
-
-
-
-
-
Max.  
-
-
Unit  
V
V
V
μA  
μA  
Test conditions  
IC=10μA, IE=0  
IC=2mA, IB=0  
IE=10μA, IC=0  
VCB=20V, IE=0  
VEB=4 V, IC=0  
VCE=10V, IC= 500mA  
VCE=5V, IC= 1A  
IC=500mA, IB= 50mA  
IC=500mA, IB= 50mA  
60  
50  
5
-
-
85  
50  
-
-
-
V(BR)CEO  
V(BR)EBO  
ICBO  
-
0.1  
0.1  
340  
-
0.4  
1.2  
-
Emitter Cut-Off Current  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
DC Current Gain  
Collector-Emitter Saturation  
Base-Emitter Saturation Voltage  
Transition Frequency  
V
V
-
200  
20  
MHz VCE=10V, IC=50mA, f=200MHz  
pF VCB=10V, IE=0, f=1MHz  
Collector Output Capacitance  
COB  
-
-
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
23-Feb-2011 Rev. A  
Page 1 of 2  

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