2SD874A
1A , 60V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Complementary to 2SB766A
4
1
2
C
3
E
B
A
E
CLASSIFICATION OF hFE (1)
C
Product-Rank
2SD874A-Q
85~170
YQ
2SD874A-R
120~240
YR
2SD874A-S
170~340
YS
B
D
K
Range
F
G
H
Marking
J
L
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
A
B
C
D
4.40
3.94
1.40
2.30
G
H
J
0.40
0.58
1.50 TYP
3.00 TYP
K
0.32
0.35
0.52
0.44
E
F
1.50
0.89
1.70
1.20
L
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
5
1
V
V
V
A
mW
°C
500
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage V(BR)CBO
Collector-Emitter Breakdown
Emitter-Base Breakdown Boltage
Collector Cut-Off Current
Symbol
Min.
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
Unit
V
V
V
μA
μA
Test conditions
IC=10μA, IE=0
IC=2mA, IB=0
IE=10μA, IC=0
VCB=20V, IE=0
VEB=4 V, IC=0
VCE=10V, IC= 500mA
VCE=5V, IC= 1A
IC=500mA, IB= 50mA
IC=500mA, IB= 50mA
60
50
5
-
-
85
50
-
-
-
V(BR)CEO
V(BR)EBO
ICBO
-
0.1
0.1
340
-
0.4
1.2
-
Emitter Cut-Off Current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
DC Current Gain
Collector-Emitter Saturation
Base-Emitter Saturation Voltage
Transition Frequency
V
V
-
200
20
MHz VCE=10V, IC=50mA, f=200MHz
pF VCB=10V, IE=0, f=1MHz
Collector Output Capacitance
COB
-
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Feb-2011 Rev. A
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