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2SD669B(TO-92NL) PDF预览

2SD669B(TO-92NL)

更新时间: 2024-11-12 14:30:07
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
5页 114K
描述
Transistor

2SD669B(TO-92NL) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):1.5 A配置:Single
最小直流电流增益 (hFE):60最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):20 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SD669B(TO-92NL) 数据手册

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UTC 2SD669/A  
NPN EPITAXIAL SILICON TRANSISTOR  
BIPOLAR POWER GENERAL  
PURPOSE TRANSISTOR  
APPLICATIONS  
* Low frequency power amplifier complementary pair with  
UTC 2SB649/A  
1
TO-92NL  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
RATING  
180  
UNIT  
V
V
Collector-emitter voltage  
VCEO  
2SD669  
2SD669A  
120  
160  
Emitter-base voltage  
Collector current  
Collector peak current  
Collector power dissipation  
Collector power dissipation (TC=25°C)  
Junction Temperature  
Storage Temperature  
VEBO  
Ic  
lc(peak)  
Pc  
Pc  
Tj  
5
1.5  
3
1
20  
V
A
A
W
W
°C  
°C  
150  
-55 ~ +150  
TSTG  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
TEST CONDITIONS  
IC=1mA, IE=0  
MIN TYP MAX UNIT  
Collector to bse breakdown voltage  
Collector to emitter breakdown  
180  
V
V
IC=10mA, RBE=∞  
voltage  
2SD669  
120  
160  
5
2SD669A  
Emitter to base breakdown voltage  
Collector cut-off current  
V(BR)EBO  
ICBO  
IE=1mA, IC=0  
VCB=160V, IE=0  
V
10  
µA  
hFE1  
hFE2  
VCE(sat)  
VBE  
fT  
Cob  
VCE=5V, Ic=150mA (note)  
VCE=5V, Ic=500mA (note)  
Ic=600mA, IB=50mA (note)  
VCE=5V, Ic=150mA (note)  
VCE=5V,Ic=150mA (note)  
VCB=10V, IE=0, f=1MHz  
60  
30  
320  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
Current gain bandwidth product  
Output capacitance  
1
1.5  
V
V
MHz  
pF  
140  
14  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-011,B  

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