Datasheet > 2SD669-B-T9N-T

2SD669-B-T9N-T

更新时间： 2024-11-12 04:46:31

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
2页	90K
描述
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

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中文翻译

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数据手册

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2SD669-B-T9N-T 数据手册

Transys

Electronics

I M I T E D

TO-126C Plastic-Encapsulated Transistors

2SD669 TRANSISTOR (NPN)

TO-126C

FEATURES

Power dissipation

P_CM:

W (Tamb=25℃)

1. EMITTER

2. COLLECTOR

3. BASE

Collector current

I_CM:

1.5

1 2 3

Collector-base voltage

V_(BR)CBO180

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=1mA, I_E=0

MIN

180

120

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=10mA, I_B=0

I_E=1mA, I_C=0

µA

V_CB=160V, I_E=0

V_EB=4V, I_C=0

I_EBO

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

_CE=5V, I_C=150mA

320

DC current gain

V_CE=5V, I_C=500mA

I_C=500mA, I_B=50mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE=5V, I_C=150mA

1.5

MHz

Transition frequency

f_T

V_CE=5V, I_C=150mA

140

C_ob

Collector output capacitance

_CB=10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

160-320

Range

60-120

100-200

中文翻译

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