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2SD669C PDF预览

2SD669C

更新时间: 2024-09-24 07:31:51
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管放大器局域网
页数 文件大小 规格书
2页 267K
描述
NPN Silicon Plastic-Encapsulate Transistor

2SD669C 数据手册

 浏览型号2SD669C的Datasheet PDF文件第2页 
2SD669(A)  
2SD669(A)-B  
2SD669(A)-C  
2SD669-D  
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Features  
·
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Capable of 1 Watts of Power Dissipation.  
Collector-current 1.5A  
·
·
Collector-base Voltage 180V  
Operating and storage junction temperature range: -55OC to +150OC  
ꢀꢁꢂꢃꢄꢅꢆ  
K
A
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
N
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
D
Collector-Emitter Breakdown Voltage  
(I =10mAdc, IB=0)  
---  
---  
2SD669  
2SD669A  
120  
160  
Vdc  
Vdc  
C
E
M
B
---  
V(BR)CBO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
180  
Vdc  
(I =1mAdc, IE=0)  
C
Emitter-Base Breakdown Voltage  
(I =1mAdc, IC=0)  
5.0  
---  
---  
---  
10  
10  
Vdc  
uAdc  
uAdc  
E
1
2
3
I
Collector Cutoff Current  
(VCB=160Vdc, IE=0)  
Emitter Cutoff Current  
CBO  
L
G
IEBO  
(VEB=4Vdc, I =0)  
C
ON CHARACTERISTICS  
hFE-1  
DC Current Gain  
C
---  
---  
(I =150mAdc, VCE=5Vdc)  
C
2SD669  
2SD669A  
60  
60  
320  
200  
hFE-2  
DC Current Gain  
30  
---  
---  
---  
---  
Vdc  
Vdc  
(I =500mAdc, VCE=5Vdc)  
C
VCE(sat)  
VBE  
fT  
Cob  
Collector-Emitter Saturation Voltage  
1.0  
1.5  
(I =500mAdc, IB=50mAdc)  
C
F
Q
Base-Emitter Saturation Voltage  
(VCE=5Vdc, IC=150mAdc)  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
TransitionFrequency  
(VCE=5Vdc, IC=150mAdc)  
MHz  
pF  
140(TYP)  
14(TYP)  
DIMENSIONS  
Collectoroutputcapacitance  
(VCB=10Vdc, IE=0,f=1MHz)  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢈꢀꢇꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
7.40  
10.60  
15.30  
3.90  
3.00  
0.66  
1.17  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
ꢉꢆ  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
FE  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
CLASSIFICATION OF H  
Rank  
B
C
D
Range 2SD669  
60-120  
100-200  
160-320  
2SD669A  
60-120  
100-200  
ꢕꢆ  
0.090TYP  
0.098  
0.083  
0.000  
0.043  
2.290TYP  
ꢖꢆ  
0.114  
2.50  
2.90  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
L
M
N
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
2.30  
0.30  
1.50  
Q
0.018  
0.024  
0.45  
0.60  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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