生命周期: | Active | 零件包装代码: | SOT-223 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.57 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 140 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD669-B-AA3-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-AB3-F-R | UTC |
获取价格 |
Transistor | |
2SD669-B-AB3-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-AB3-R | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-AB3-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-BP | MCC |
获取价格 |
暂无描述 | |
2SD669-B-BP-HF | MCC |
获取价格 |
暂无描述 | |
2SD669-BP-HF | MCC |
获取价格 |
Power Bipolar Transistor, | |
2SD669-B-T60-A-K | UTC |
获取价格 |
Transistor | |
2SD669-B-T60-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |