是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.69 |
最大集电极电流 (IC): | 1.5 A | 配置: | Single |
最小直流电流增益 (hFE): | 30 | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD669-B-AB3-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-AB3-R | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-AB3-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-BP | MCC |
获取价格 |
暂无描述 | |
2SD669-B-BP-HF | MCC |
获取价格 |
暂无描述 | |
2SD669-BP-HF | MCC |
获取价格 |
Power Bipolar Transistor, | |
2SD669-B-T60-A-K | UTC |
获取价格 |
Transistor | |
2SD669-B-T60-K | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-T60-R | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | |
2SD669-B-T60-T | UTC |
获取价格 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |