生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.48 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 50 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 2000 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SD2423GTUR | HITACHI | Small Signal Bipolar Transistor, 1.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3 |
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2SD2423GTUR | RENESAS | 暂无描述 |
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2SD2425 | NEC | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHIN |
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2SD2425AB1 | NEC | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR |
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2SD2425-AB1 | NEC | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD2425-AB1 | RENESAS | 5A, 60V, NPN, Si, POWER TRANSISTOR |
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