Datasheet > 2SD2425

2SD2425

更新时间： 2024-01-17 03:41:58

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管开关功率放大器
页数	文件大小	规格书
6页	127K
描述
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2425 数据手册

DATA SHEET

SILICON TRANSISTOR

2SD2425

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SD2425 is

a transistor featuring high current

capacitance in small dimension. This transistor is ideal for

DC/DC converters and motor drivers.

FEATURES

• New package with dimensions in between those of small

signal and power signal package

• High current capacitance

• Low collector saturation voltage

• Complementary transistor with 2SB1578

QUALITY GRADES

Electrode connection

1. Emitter

• Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the

devices and its recommended applications.

2. Collector

3.Base

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

P^T

Conditions

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

6.0

5.0

PW ≤ 10 ms, duty cycle ≤ 50 %

7.0

1.0

7.5 cm²× 0.7 mm ceramic board mounted

Total power dissipation

Junction temperature

Storage temperature

2.0

°C

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16157EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

下载PDF

与2SD2425相关器件

型号	品牌	获取价格	描述	数据表
2SD2425AB1	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR
2SD2425-AB1	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2425-AB1	RENESAS	获取价格	5A, 60V, NPN, Si, POWER TRANSISTOR
2SD2425AB1-AY	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
2SD2425-AB1-AZ	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2425AB1-T1-AY	RENESAS	获取价格	暂无描述
2SD2425AB1-T2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-243VAR
2SD2425AB2	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 5A I(C) \| TO-243VAR
2SD2425-AB2	NEC	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2425-AB2	RENESAS	获取价格	5A, 60V, NPN, Si, POWER TRANSISTOR