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2SD2425AB1 PDF预览

2SD2425AB1

更新时间: 2022-01-19 19:23:00
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 127K
描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR

2SD2425AB1 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SD2425  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SD2425 is  
a transistor featuring high current  
capacitance in small dimension. This transistor is ideal for  
DC/DC converters and motor drivers.  
FEATURES  
• New package with dimensions in between those of small  
signal and power signal package  
• High current capacitance  
• Low collector saturation voltage  
• Complementary transistor with 2SB1578  
QUALITY GRADES  
Electrode connection  
1. Emitter  
• Standard  
Please refer to “Quality Grades on NEC Semiconductor  
Devices” (Document No. C11531E) published by NEC  
Corporation to know the specification of quality grade on the  
devices and its recommended applications.  
2. Collector  
3.Base  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
IB(DC)  
PT  
Conditions  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
60  
60  
V
6.0  
5.0  
V
A
PW 10 ms, duty cycle 50 %  
7.0  
1.0  
A
A
7.5 cm2 × 0.7 mm ceramic board mounted  
Total power dissipation  
Junction temperature  
Storage temperature  
2.0  
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16157EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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