Datasheet > 2SD2071

2SD2071

更新时间： 2024-11-05 23:20:31

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中文翻译

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数据手册

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2SD2071 数据手册

Transistor

2SD2071

Silicon NPN epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SB1377

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Output of 1W is obtained with a complementary pair with

2SB1377.

0.65 max.

●

Allowing supply with the radial taping.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

type as shown in

the lower figure is

also available.

MT2 Type Package

I_C

500

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

–55 ~ +150

1.2±0.1

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

0.65

max.

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

_CB= 20V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

0.1

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 10mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA

V_CB= 10V, I_E= –50mA

V_CB= 10V, I_E= 0, f = 1MHz

160

340

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.35

1.1

200

0.6

1.5

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3

中文翻译

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