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2SD2067(TENTATIVE) PDF预览

2SD2067(TENTATIVE)

更新时间： 2024-09-14 23:20:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 57K
描述
2SD2067 (Tentative) - Silicon NPN epitaxial planer type

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中文翻译

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2SD2067(TENTATIVE) 数据手册

 浏览型号2SD2067(TENTATIVE)的Datasheet PDF文件第2页 
Transistor  
2SD2067 (Tentative)  
Silicon NPN epitaxial planer type  
Unit: mm  
2.5±0.1  
1.05  
±0.05  
6.9±0.1  
4.0  
(1.45)  
0.8  
0.7  
For low-frequency output amplification  
0.65 max.  
Features  
Darlington connection.  
■
●
●
High foward current transfer ratio hFE  
.
0.45+–00..015  
●
●
●
Large peak collector current ICP  
High collector to emitter voltage VCEO  
Allowing supply with the radial taping.  
.
2.5±0.5 2.5±0.5  
.
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
■
Note: In addition to the  
lead type shown in  
1:Emitter  
2:Collector  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
the upper figure, the 3:Base  
type as shown in  
the lower figure is  
also available.  
MT2 Type Package  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
120  
100  
V
5
V
3
A
1.2±0.1  
IC  
2
A
0.65  
max.  
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
+
0.1  
0.45–0.05  
(HW type)  
Tj  
150  
Tstg  
–55 ~ +150  
*
Internal Connection  
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
C
E
B
≈200Ω  
Electrical Characteristics (Ta=25˚C)  
■
Parameter  
Symbol  
ICBO  
Conditions  
CB = 25V, IE = 0  
min  
typ  
max  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
V
0.1  
1
IEBO  
VEB = 4V, IC = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
VCBO  
VCEO  
VEBO  
IC = 100µA, IE = 0  
120  
100  
5
I
C = 1mA, IB = 0  
V
IE = 100µA, IC = 0  
VCE = 10V, IC = 1A*2  
IC = 1A, IB = 1mA*2  
IC = 1A, IB = 1mA*2  
V
*1  
hFE  
4000  
40000  
1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
V
V
2
*2 Pulse measurement  
*1  
h
Rank classification  
FE  
Rank  
hFE  
Q
R
S
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000  
1
12

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