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2SD2008T105R PDF预览

2SD2008T105R

更新时间: 2024-11-09 20:42:43
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 101K
描述
1A, 80V, NPN, Si, POWER TRANSISTOR

2SD2008T105R 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.77
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SD2008T105R 数据手册

 浏览型号2SD2008T105R的Datasheet PDF文件第2页 

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