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2SD2010T105B PDF预览

2SD2010T105B

更新时间: 2024-11-08 10:25:03
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
2页 95K
描述
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SD2010T105B 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):2 A集电极-发射极最大电压:50 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):5000
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

2SD2010T105B 数据手册

 浏览型号2SD2010T105B的Datasheet PDF文件第2页 

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