是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 3 A | 配置: | Single |
最小直流电流增益 (hFE): | 100 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 25 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2012(Q) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220AB | |
2SD2012(TO-220F) | CJ |
获取价格 |
Transistor | |
2SD2012_03 | TOSHIBA |
获取价格 |
NPN SILICON POWER TRANSISTOR | |
2SD2012_06 | TOSHIBA |
获取价格 |
Silicon NPN Triple Diffused Type | |
2SD2012_09 | TOSHIBA |
获取价格 |
Audio Frequency Power Amplifier Applications | |
2SD2012-BP | MCC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD2012FM | TOSHIBA |
获取价格 |
Audio Frequency Power Amplifier Applications | |
2SD2014 | ALLEGRO |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SD2014 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2014 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |