5秒后页面跳转
2SD201 PDF预览

2SD201

更新时间: 2024-11-07 05:56:39
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 109K
描述
Silicon NPN Power Transistors

2SD201 数据手册

 浏览型号2SD201的Datasheet PDF文件第2页浏览型号2SD201的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD201  
DESCRIPTION  
·With TO-3 package  
·Large current capability  
·Wide area of safe operation  
APPLICATIONS  
·For power amplifier and switching  
applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
90  
Open base  
60  
V
Open collector  
6
6
V
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
50  
W
Tj  
150  
-55~150  
Tstg  

与2SD201相关器件

型号 品牌 获取价格 描述 数据表
2SD2010 ROHM

获取价格

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD2010A ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP
2SD2010B ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP
2SD2010C ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | SIP
2SD2010T105 ROHM

获取价格

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2010T105A ROHM

获取价格

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2010T105B ROHM

获取价格

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2010T105C ROHM

获取价格

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2011 ROHM

获取价格

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD2011A ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP