是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.35 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 70 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 8000 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1630-K | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD1630K-AZ | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1630L | NEC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 | |
2SD1630-L | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD1630L-AZ | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1630M | NEC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 | |
2SD1630-M | NEC |
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暂无描述 | |
2SD1631 | TOSHIBA |
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NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIO | |
2SD1631(TPF2) | TOSHIBA |
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TRANSISTOR 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
2SD1631(TPF2,F) | TOSHIBA |
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TRANSISTOR,BJT,DARLINGTON,NPN,30V V(BR)CEO,1.5A I(C),SC-71 |