5秒后页面跳转
2SD1277 PDF预览

2SD1277

更新时间: 2024-02-20 16:02:46
品牌 Logo 应用领域
松下 - PANASONIC 晶体开关晶体管功率双极晶体管PC局域网
页数 文件大小 规格书
2页 64K
描述
Silicon NPN triple diffusion planar type Darlington(For midium speed power switching)

2SD1277 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SD1277 数据手册

 浏览型号2SD1277的Datasheet PDF文件第2页 
Power Transistors  
2SD1277, 2SD1277A  
Silicon NPN triple diffusion planar type Darlington  
For midium speed power switching  
Unit: mm  
10.0±0.2  
5.5±0.2  
4.2±0.2  
Complementary to 2SB951 and 2SB951A  
2.7±0.2  
Features  
High foward current transfer ratio hFE  
φ3.1±0.1  
High-speed switching  
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
1.4±0.1  
Absolute Maximum Ratings (T =25˚C)  
C
+0.2  
–0.1  
0.5  
0.8±0.1  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SD1277  
2SD1277A  
2SD1277  
60  
VCBO  
V
2.54±0.25  
base voltage  
Collector to  
80  
5.08±0.5  
60  
1
2
3
VCEO  
V
1:Base  
2:Collector  
3:Emitter  
emitter voltage 2SD1277A  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
VEBO  
ICP  
7
V
A
A
TO–220 Full Pack Package(a)  
12  
Internal Connection  
IC  
8
C
E
Collector power TC=25°C  
45  
PC  
W
dissipation  
Ta=25°C  
2
B
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
100  
2
Unit  
µA  
mA  
V
Collector cutoff  
2SD1277  
VCB = 60V, IE = 0  
current  
2SD1277A  
VCB = 80V, IE = 0  
VEB = 7V, IC = 0  
Emitter cutoff current  
IEBO  
Collector to emitter 2SD1277  
voltage 2SD1277A  
60  
80  
VCEO  
IC = 30mA, IB = 0  
*
hFE1  
VCE = 3V, IC = 4A  
VCE = 3V, IC = 8A  
IC = 4A, IB = 8mA  
2000  
500  
10000  
Forward current transfer ratio  
hFE2  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
1.5  
2
V
V
IC = 4A, IB = 8mA  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = 10V, IC = 0.5A, f = 1MHz  
20  
MHz  
µs  
0.5  
4
IC = 4A, IB1 = 8mA, IB2 = –8mA,  
VCC = 50V  
µs  
1
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
2000 to 5000 4000 to 10000  
1

与2SD1277相关器件

型号 品牌 描述 获取价格 数据表
2SD1277/2SD1277A ETC 2SD1277. 2SD1277A - NPN Transistor Darlington

获取价格

2SD1277_15 JMNIC Silicon NPN Power Transistors

获取价格

2SD1277_2015 JMNIC Silicon NPN Power Transistors

获取价格

2SD1277A SAVANTIC Silicon NPN Power Transistors

获取价格

2SD1277A JMNIC Silicon NPN Power Transistors

获取价格

2SD1277A ISC Silicon NPN Power Transistors

获取价格