Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
Complementary to 2SB951 and 2SB951A
2.7±0.2
Features
High foward current transfer ratio hFE
■
●
φ3.1±0.1
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
+0.2
–0.1
0.5
0.8±0.1
Parameter
Symbol
Ratings
Unit
Collector to
2SD1277
2SD1277A
2SD1277
60
VCBO
V
2.54±0.25
base voltage
Collector to
80
5.08±0.5
60
1
2
3
VCEO
V
1:Base
2:Collector
3:Emitter
emitter voltage 2SD1277A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
7
V
A
A
TO–220 Full Pack Package(a)
12
Internal Connection
IC
8
C
E
Collector power TC=25°C
45
PC
W
dissipation
Ta=25°C
2
B
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
2
Unit
µA
mA
V
Collector cutoff
2SD1277
VCB = 60V, IE = 0
current
2SD1277A
VCB = 80V, IE = 0
VEB = 7V, IC = 0
Emitter cutoff current
IEBO
Collector to emitter 2SD1277
voltage 2SD1277A
60
80
VCEO
IC = 30mA, IB = 0
*
hFE1
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
2000
500
10000
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
1.5
2
V
V
IC = 4A, IB = 8mA
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
µs
0.5
4
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
µs
1
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
2000 to 5000 4000 to 10000
1