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2SD1279 PDF预览

2SD1279

更新时间: 2024-11-02 06:17:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 114K
描述
Silicon NPN Power Transistors

2SD1279 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SD1279 数据手册

 浏览型号2SD1279的Datasheet PDF文件第2页浏览型号2SD1279的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1279  
DESCRIPTION  
·With TO-3 package  
·High voltage;high speed  
·Low collector saturation voltage  
APPLICATIONS  
·Color TV horizontal deflection output  
applications  
·Switching regulator applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
1400  
600  
5
UNIT  
V
Open base  
V
Open collector  
V
10  
A
IB  
Base current  
5
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
-65~150  
Tstg  

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暂无描述
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