Datasheet > 2SD1280A

2SD1280A

更新时间： 2024-11-03 07:30:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	250K
描述
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, MINI PACKAGE-3

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2SD1280A 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SD1280

Silicon NPN epitaxial planar type

For low-voltage type medium output power amplification

Unit: mm

4.5 0.1

1.6 0.2

1.5 0.1

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• Satisfactory operation performances at high efficiency with the low-

voltage power supply.

• Mini power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the magazine

packing.

0.4 0.08

1.5 ^0.1

0.5 0.08

0.4 0.04

3˚

■ Absolute Maximum Ratings T_a= 25°C

45˚

3.0 0.15

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

1 : Base

2 : Collector

3 : Emitter

MiniP3-F1 Package

Peak collector current

I_CP

Marking Symbol: R

Collector power dissipation ^*

Junction temperature

P_C

°C

T_j

150

Storage temperature

T_stg

−55 to +150

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

board thickness of 1.7 mm for the collector portion

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

Conditions

I_C= 1 mA, I_B= 0

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

V_EBO

I_E= 10 µA, I_C= 0

I_CBO

V_CB= 10 V, I_E= 0

V_CE= 2 V, I_C= 0.5 A

V_CE= 2 V, I_C= 1.5 A

µA



h_FE1

280

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= 1 A, I_B= 50 mA

0.5

1.2

V_BE(sat)I_C= 500 mA, I_B= 50 mA

f_T

V_CB= 6 V, I_E= −50 mA, f = 200 MHz

V_CB= 6 V, I_E= 0, f = 1 MHz

150

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

90 to 155

130 to 210

180 to 280

Publication date: December 2002

SJC00214CED

12 3 4

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与2SD1280A相关器件

型号	品牌	获取价格	描述	数据表
2SD1280AQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, MI
2SD1280AR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, MI
2SD1280AS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, MI
2SD1280AT	PANASONIC	获取价格	暂无描述
2SD1280G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SD1280GQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SD1280GR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SD1280GS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SD1280H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD1280-HF_15	KEXIN	获取价格	NPN Transistors

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