Datasheet > 2SD1280-Q

2SD1280-Q

更新时间： 2024-11-03 01:06:03

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1280-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1280

1.70 0.1

■ Features

● Satisfactory operation performances at high efficiency with the

low-voltage power supply.

● Low collector to emitter saturation voltage V^CE(sat)

● Complementary to 2SB956

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

℃

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

CB= 20 V , I

^EB= 5V , I

=1A, I =50mA

=500 mA, I =50mA

E= 0

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

0.5

1.2

360

hFE(1)

CE= 2V, I

= 500mA

= 1.5 A

150

100

DC current gain

hFE(2)

Collector output capacitance

Transition frequency

Cob

^CB= 6V, IE = 0, f = 1MHz

CE= 6V, I = -50mA,f=200MHz

150

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1280-Q

90-155

2SD1280-R

130-210

2SD1280-S

180-280

2SD1280-T

250-360

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