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2SD1280_15 PDF预览

2SD1280_15

更新时间: 2024-11-03 01:06:03
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3页 1089K
描述
NPN Transistors

2SD1280_15 数据手册

 浏览型号2SD1280_15的Datasheet PDF文件第2页浏览型号2SD1280_15的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SD1280  
1.70 0.1  
Features  
Satisfactory operation performances at high efficiency with the  
low-voltage power supply.  
Low collector to emitter saturation voltage VCE(sat)  
Complementary to 2SB956  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
20  
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
20  
5
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
1
A
I
CP  
2
1
P
C
W
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
20  
20  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μAI  
Ic= 1 mAI = 0  
= 100μAI  
E= 0  
B
I
E
C= 0  
I
CBO  
EBO  
V
V
CB= 20 V , I  
EB= 5V , I  
=1A, I =50mA  
=500 mA, I =50mA  
E= 0  
1
uA  
V
I
C=0  
1
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
B
0.5  
1.2  
360  
V
C
B
hFE(1)  
V
V
V
V
CE= 2V, I  
CE= 2V, I  
C
= 500mA  
= 1.5 A  
90  
50  
150  
100  
18  
DC current gain  
hFE(2)  
C
Collector output capacitance  
Transition frequency  
Cob  
CB = 6V, IE = 0, f = 1MHz  
CE= 6V, I = -50mA,f=200MHz  
pF  
f
T
E
150  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SD1280-Q  
90-155  
RQ  
2SD1280-R  
130-210  
RR  
2SD1280-S  
180-280  
RS  
2SD1280-T  
250-360  
RT  
1
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