Datasheet > 2SD1048

2SD1048

更新时间： 2024-10-15 06:22:23

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科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	37K
描述
NPN Epitaxial Planar Silicon Transistors

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中文翻译

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数据手册

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2SD1048 数据手册

SMD Type

TransistIoCrs

NPN Epitaxial Planar Silicon Transistors

2SD1048

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Ultrasmall package allows miniaturization in end products.

Large current capacity (IC=0.7A) and low-saturation voltage.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

0.7

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

1.5

P^C

200

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Symbol

Testconditons

Min

200

Typ

Max

0.1

Unit

ìA

Ic^BO

I^EBO

h^FE

f^T

VCB = 15V , IE = 0

VEB = 4V , IC = 0

0.1

ìA

VCE = 2V , IC = 50mA

VCE = 10V , IC = 50mA

VCB = 10V , f = 1MHz

900

Gain bandwidth product

Output capacitance

250

MHz

C^ob

V^CE(sat)IC = 5mA , IB = 0.5mA

V^CE(sat)IC = 100mA , IB = 10mA

Collector-emitter saturation voltage

hFE Classification

Marking

hFE

200 400

300 600

450 900

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