Datasheet > 2SD1048_15

2SD1048_15

更新时间： 2024-11-25 01:09:03

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1048_15 数据手册

SMD Type

Transistors

NPN Transistors

2SD1048

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Large current capacity (IC=0.7A) and low-saturation voltage.

● Complimentary to 2SB815

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

700

1.5

200

125

℃

Storage Temperature Range

stg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

CB= 15 V , I

^EB= 4V , I

=5 mA, I

= 0

0.1

=0.5mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

=100 mA, I

=10mA

BE(sat)

1.2

900

hFE(1)

CE= 2V, I

= 50mA

200

hFE(2)

C= 500mA

Collector output capacitance

Transition frequency

Cob

CB= 10V, I

^CE= 10V, I

E=0,f=1MHz

C= 50mA

250

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1048-X6

200-400

2SD1048-X7

300-600

2SD1048-X8

450-900

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