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2SD1048-6-TB-E

更新时间： 2024-11-27 12:34:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	256K
描述
Bipolar Transistor

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中文翻译

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数据手册
替代型号

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2SD1048-6-TB-E 数据手册

Ordering number : EN694G

2SB815/2SD1048

Bipolar Transistor

http://onsemi.com

(–)

(

) (

)

15V,

0.7A, Low V

sat , PNP NPN Single CP

Features

•

Ultrasmall package allows miniaturization in end products

•

Large current capacity (I =0.7A) and low-saturation voltage

( ): 2SB815

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

(--)20

Unit

CBO

(--)15

CEO

(--)5

EBO

(--)0.7

(--)1.5

200

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

125

Tstg

--55 to +125

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: CP

7013A-009

• JEITA, JEDEC

: SC-59, TO-236, SOT-23, TO-236AB

•

Minimum Packing Quantity : 3,000 pcs./reel

2.9

0.1

2SB815-6-TB-E

2SB815-7-TB-E

2SD1048-6-TB-E

2SD1048-7-TB-E

Packing Type: TB

0.95

0.4

1 : Base

Marking

2 : Emitter

3 : Collector

B•

X–

2SB815

2SD1048

Electrical Connection

2SB815

2SD1048

Semiconductor Components Industries, LLC, 2013

September, 2013

O1012 TKIM/41301 TSIM/91098 HA (KT)/8258MO/4017 KI/2173 KI, TS No.694-1/6

12 3 4 5 6

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2SD1048-6-TB-E 替代型号

型号	品牌	替代类型	描述	数据表
2SD1048-7-TB-E	ONSEMI	完全替代	Bipolar Transistor

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