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2SD1048-X8 PDF预览

2SD1048-X8

更新时间: 2024-11-25 01:09:03
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科信 - KEXIN /
页数 文件大小 规格书
3页 736K
描述
NPN Transistors

2SD1048-X8 数据手册

 浏览型号2SD1048-X8的Datasheet PDF文件第2页浏览型号2SD1048-X8的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SD1048  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Large current capacity (IC=0.7A) and low-saturation voltage.  
Complimentary to 2SB815  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
20  
Unit  
V
VCBO  
VCEO  
VEBO  
15  
5
Collector Current - Continuous  
Collector Current - Pulse  
Collector Power Dissipation  
Junction Temperature  
I
C
700  
1.5  
200  
125  
mA  
A
I
CP  
P
C
mW  
T
J
Storage Temperature Range  
T
stg  
-55 to 125  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= 100 μAI = 0  
Ic= 1 mAI = 0  
= 100μAI  
Min  
20  
15  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
= 0  
I
CBO  
EBO  
V
V
CB= 15 V , I  
EB= 4V , I  
=5 mA, I  
E
= 0  
0.1  
0.1  
25  
uA  
I
C
=0  
I
I
I
C
B
=0.5mA  
10  
30  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
mV  
V
C
=100 mA, I  
=100 mA, I  
B
=10mA  
=10mA  
80  
V
BE(sat)  
C
B
1.2  
900  
hFE(1)  
V
V
V
V
CE= 2V, I  
CE= 2V, I  
C
= 50mA  
200  
80  
hFE(2)  
C= 500mA  
Collector output capacitance  
Transition frequency  
Cob  
CB= 10V, I  
CE= 10V, I  
E=0,f=1MHz  
8
pF  
f
T
C= 50mA  
250  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
2SD1048-X6  
200-400  
X6  
2SD1048-X7  
300-600  
X7  
2SD1048-X8  
450-900  
X8  
1
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | SC-71