生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 82 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1055C1Q | ROHM |
获取价格 |
2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1055C1R | ROHM |
获取价格 |
2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1055R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 PI | |
2SD1060 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1060 | UTC |
获取价格 |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |
2SD1060 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1060 | SANYO |
获取价格 |
50V/5A Switching Applications | |
2SD1060 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1060_08 | UTC |
获取价格 |
NPN PLANAR SILICON TRANSISTOR | |
2SD1060_12 | SANYO |
获取价格 |
NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications |