2SD1060

更新时间： 2024-10-15 07:31:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	83K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD1060 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1060

DESCRIPTION

·With TO-220 package

·Low collector saturation voltage

·Complement to type 2SB824

APPLICATIONS

·Suitable for relay drivers,high-speed

Inverters,converters,and other general

large-current switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I_CP

P_C

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4

中文翻译

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