Datasheet > 2SD1060_2015

2SD1060_2015

更新时间： 2024-11-25 01:18:51

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	133K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SD1060_2015 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SD1060

DESCRIPTION

·With TO-220 package

·Low collector-emitter saturation voltage

·Complement to type 2SB824

APPLICATIONS

·Suitable for relay drivers,high-speed

Inverters,converters,and other general

large-current switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I_CP

P_C

T_C=25℃

℃

T_j

150

-55~150

T_stg

JMnic

12 3 4

中文翻译

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