Datasheet > 2SD1060R-1E

2SD1060R-1E

更新时间： 2024-11-28 14:55:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
4页	192K
描述
双极晶体管，50V，5A，低 VCE(sat)，NPN TO-220-3L

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数据手册

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2SD1060R-1E 数据手册

Ordering number : EN686K

2SD1060

Bipolar Transistor

http://onsemi.com

( )

sat NPN TO-220-3L

50V, 5A, Low V

Applications

•

Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching

Features

•

Low collector-to-emitter saturation voltage : V (sat)=0.3V max / I =3A, I = 0.3A

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

Collector Current (Pulse)

1.75

150

Collector Dissipation

Tc=25 C

Junction Temperature

Storage Temperature

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: TO-220-3L

7536-002

• JEITA, JEDEC : SC-46, TO-220AB

• Minimum Packing Quantity : 50 pcs./magazine

4.5

10.0

3.6

Marking

Electrical Connection

1.3

(0.6)

8.9 MAX

D1060

Rank LOT No.

1.52

1.27

0.8

0.5

1 : Base

2 : Collector

3 : Emitter

2.54

TO-220-3L

Semiconductor Components Industries, LLC, 2013

September, 2013

40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/4

12 3 4

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