Datasheet > 2SD1060S(TO-126)

2SD1060S(TO-126)

更新时间： 2024-11-24 14:46:23

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描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SD1060S(TO-126) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	5 A
配置：	Single	最小直流电流增益 (hFE)：	180
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	30 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SD1060S(TO-126) 数据手册

UTC2SD1060

NPNEPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR SILICON

TRANSISTOR

FEATURE

*Low collector-to-emitter saturation voltage:

VCE(sat)=0.4V max/IC=3A, IB=0.3A

APPLICATIONS

*Suitable for relay drivers, high-speed inverter, converters,

and other general large-current switching.

TO-126

1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector Current (Pulse)

Collector Dissipation (Tc=25°C)

Junction Temperature

ICP

TSTG

150

°C

Storage Temperature

-55 ~ +150

ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

MIN. TYP. MAX. UNIT

VCB=40V,IE=0

VEB=4V,IC=0

0.1

360

IEBO

hFE1

VCE=2V, IC=1A

VCE=2V, IC=3A,

VCE =5V, IC =1A

VCB =10V, f=1MHz

IC =3A, IB =0.3A

IC =1mA, IE =0

IC =1mA, RBE =∞

hFE2

Cob

Gain bandwidth product

Output Capacitance

100

MHZ

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown

Voltage

VCE(sat)

V(BR)CBO

V(BR)CEO

0.4

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

V(BR)EBO

IC =0, IE =1mA

tON

tstg

See specified test circuit

0.1

1.4

0.2

µs

Fall Time

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R204-012,B

12 3 4

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