Datasheet > 2SD0968/2SD0968A(2SD968/2SD968A)

2SD0968/2SD0968A(2SD968/2SD968A)

更新时间： 2024-09-30 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	66K
描述
2SD0968. 2SD0968A (2SD968. 2SD968A) - NPN Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD0968/2SD0968A(2SD968/2SD968A) 数据手册

浏览型号2SD0968/2SD0968A(2SD968/2SD968A)的Datasheet PDF文件第2页

Transistor

2SD0968, 2SD0968A (2SD968, 2SD968A)

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Unit: mm

Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)

1.5 0.1

4.5 0.1

1.6 0.2

Features

High collector to emitter voltage V_CEO

Large collector power dissipation P_C.

45°

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

0.4 0.08

0.4 0.04

0.5 0.08

1.5 0.1

3.0 0.15

Absolute Maximum Ratings (Ta=25˚C)

Parameter

2SD0968

Symbol

Ratings

Unit

Collector to

100

V_CBO

marking

base voltage

Collector to

2SD0968A

2SD0968

2SD0968A

120

100

V_CEO

emitter voltage

120

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

(2SD0968)

Marking symbol : W

I_C

0.5

(2SD0968A)

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CEO

V_EBO

Conditions

I_C= 100µA, I_B= 0

min

100

120

typ

max

Unit

Collector to emitter 2SD0968

voltage

2SD0968A

Emitter to base voltage

I_E= 10µA, I_C= 0

V_CE= 10V, I_C= 150mA^*2

V_CE= 5V, I_C= 500mA^*2

I_C= 500mA, I_B= 50mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

220

h_FE1

h_FE2

Forward current transfer ratio

100

0.2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.6

1.2

0.85

120

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

90 ~ 155

130 ~ 220

2SD0968

Marking

Symbol

Note.) The Part numbers in the Parenthesis show conventional

part number.

2SD0968A

12 3

中文翻译

下载PDF

与2SD0968/2SD0968A(2SD968/2SD968A)相关器件

型号	品牌	获取价格	描述	数据表
2SD0968A	PANASONIC	获取价格	For Low-Frequency Driver Amplification
2SD0968A(2SD968A)	ETC	获取价格	小信号デバイス－小信号トランジスタ－汎用低周波増幅
2SD0968AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0968AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0968AS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD0968G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD0968GR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD0968GS	PANASONIC	获取价格	暂无描述
2SD0968Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0968R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SC-62

与2SD0968/2SD0968A(2SD968/2SD968A)相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

36
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

30
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

28
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

39

产品中心

服务支持

精选活动

关于我们

帮助中心

2SD0968/2SD0968A(2SD968/2SD968A)

2SD0968/2SD0968A(2SD968/2SD968A) 数据手册

与2SD0968/2SD0968A(2SD968/2SD968A)相关器件

与2SD0968/2SD0968A(2SD968/2SD968A)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SD0968/2SD0968A(2SD968/2SD968A)

2SD0968/2SD0968A(2SD968/2SD968A) 数据手册

与2SD0968/2SD0968A(2SD968/2SD968A)相关器件

与2SD0968/2SD0968A(2SD968/2SD968A)相关文章

您还可以找

您在本页遇到什么问题？