Datasheet > 2SC6000(TE16L1-NQ)

2SC6000(TE16L1-NQ)

更新时间： 2024-11-04 14:48:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	427K
描述
Power Bipolar Transistor

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技术参数
数据手册

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2SC6000(TE16L1-NQ) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

2SC6000(TE16L1-NQ) 数据手册

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2SC6000

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6000

High Speed Switching Applications

Unit: mm

DC-DC Converter Applications

•

High DC current gain: h

= 250 to 400 (I = 2.5 A)

Low collector-emitter saturation: V

= 0.18 V (max)

CE (sat)

High speed switching: t = 13 ns (typ)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

120

CBO

CEX

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

7.0

10.0

0.5

Collector current

Pulse

JEDEC

JEITA

―

Base current

Collector power

dissipation

Tc = 25°C

TOSHIBA

2-7J1A

Junction temperature

150

°C

Weight: 0.36 g (typ.)

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2012-08-31

12 3 4 5

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