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2SC6019

更新时间： 2024-11-04 03:56:35
品牌 Logo 应用领域
三洋 - SANYO 晶体转换器晶体管开关
页数 文件大小 规格书
4页 41K
描述
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

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中文翻译

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2SC6019 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.54最大集电极电流 (IC)：7 A
集电极-发射极最大电压：15 V配置：SINGLE
最小直流电流增益 (hFE)：250JESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：380 MHz
Base Number Matches：1

2SC6019 数据手册

 浏览型号2SC6019的Datasheet PDF文件第2页浏览型号2SC6019的Datasheet PDF文件第3页浏览型号2SC6019的Datasheet PDF文件第4页 
Ordering number : ENN8342  
NPN Epitaxial Planar Silicon Transistor  
2SC6019  
DC / DC Converter Applications  
Applications  
•
Relay drivers, lamp drivers, motor drivers, flash.  
Features  
•
•
•
•
•
•
Adoption of FBET and MBIT processes.  
Large current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
Narrow h range.  
FE  
High allowable power dissipation.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
15  
15  
6
V
V
I
7
A
C
Collector Current (Pulse)  
Base Current  
I
10  
600  
0.8  
15  
150  
A
CP  
I
B
mA  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=12V, I =0A  
Unit  
min  
max  
0.1  
I
V
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
=4V, I =0A  
0.1  
EBO  
C
h
FE  
=2V, I =500mA  
250  
400  
C
Gain-Bandwidth Product  
f
T
=2V, I =500mA  
380  
MHz  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
61005EA MS IM TB-00001434 No.8342-1/4  
1234

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2SC6019-TL ONSEMI

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2SC6021(TP) ONSEMI

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 		TRANSISTOR,BJT,NPN,15V V(BR)CEO,10A I(C),TO-251VAR
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 		TRANSISTOR,BJT,NPN,15V V(BR)CEO,10A I(C),TO-252VAR
2SC6022 SANYO

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 		NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
2SC6022(TP) ONSEMI

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,9A I(C),TO-251VAR
2SC6022(TP-FA) ONSEMI

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,9A I(C),TO-252VAR
2SC6022-TL ONSEMI

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 		Small Signal Bipolar Transistor, 9A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3

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