2SC6011AO

更新时间： 2024-11-04 13:04:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	98K
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2SC6011AO 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC6011/A

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 200V(Min)-2SC6011

= 200V(Min)-2SC6011A

·Good Linearity of h_FE

·Complement to Type 2SA2151/A

APPLICATIONS

·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

200

230

200

230

UNIT

2SC6011

2SC6011A

2SC6011

2SC6011A

Collector-Base

V_CBO

Voltage

Collector-Emitter

Voltage

V_CEO

V_EBO

Emitter-Base Voltage

I_C

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

160

150

-55~150

℃

Junction Temperature

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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2SC6011AP	ALLEGRO	获取价格	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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2SC6011AY	ALLEGRO	获取价格	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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2SC6011P	ALLEGRO	获取价格	暂无描述
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2SC6011Y	ALLEGRO	获取价格	暂无描述
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