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2SC6011 PDF预览

2SC6011

更新时间: 2024-11-04 07:31:15
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无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
2页 98K
描述
isc Silicon NPN Power Transistor

2SC6011 数据手册

 浏览型号2SC6011的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC6011/A  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 200V(Min)-2SC6011  
= 200V(Min)-2SC6011A  
·Good Linearity of hFE  
·Complement to Type 2SA2151/A  
APPLICATIONS  
·Designed for audio and general purpose applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
200  
230  
200  
230  
6
UNIT  
2SC6011  
2SC6011A  
2SC6011  
2SC6011A  
Collector-Base  
VCBO  
V
Voltage  
Collector-Emitter  
Voltage  
VCEO  
V
VEBO  
Emitter-Base Voltage  
V
A
IC  
Collector Current-Continuous  
Base Current-Continuous  
15  
IB  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
160  
150  
-55~150  
W
Junction Temperature  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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