2SC5712

更新时间： 2024-09-22 22:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	184K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5712 数据手册

2SC5712

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5712

Industrial Applications

Unit: mm

High-Speed Switching Applications

DC-DC Converter Applications

DC-AC Converter Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.3 A)

Low collector-emitter saturation voltage: V

= 0.14 V (max)

CE (sat)

High-speed switching: t = 120 ns (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

CBO

CEX

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Pulse

3.0

5.0

300

1.0

2.5

150

JEDEC

JEITA

―

Base current

SC-62

2-5K1A

Collector power

TOSHIBA

dissipation

(Note)

t = 10 s

Weight: 0.05 g (typ.)

Junction temperature

°C

Storage temperature range

−55 to 150

stg

Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm²)

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Symbol

Test Condition

= 100 V, I = 0

Min

Typ.

Max

Unit



100



CBO

Emitter cut-off current

= 7 V, I = 0

EBO

(BR) CEO

Collector-emitter breakdown voltage

= 10 mA, I = 0

400

200



(1)

(2)

= 2 V, I = 0.3 A



1000



DC current gain

= 2 V, I = 1 A



Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

= 1 A, I = 20 mA



0.14

1.10



CE (sat)

BE (sat)

= 1 A, I = 20 mA



= 10 V, I = 0, f = 1 MHz



500

120



See Figure 1 circuit diagram.

∼

−

Switching time

30 V, R = 30 Ω

Storage time

Fall time



stg

= −I = 33.3 mA



2001-12-17

12 3 4 5

中文翻译

下载PDF

与2SC5712相关器件

型号	品牌	获取价格	描述	数据表
2SC5712(TE12L,F)	TOSHIBA	获取价格	TRANSISTOR NPN 50V 3A SC-62
2SC5712(TE12L,ZF)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC5712(TE12LF)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SC5712_06	TOSHIBA	获取价格	High-Speed Switching Applications
2SC5713	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5713(TE12L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,4A I(C),SC-62
2SC5713_06	TOSHIBA	获取价格	Silicon NPN Epitaxial Type High-Speed Switching Applications
2SC5714	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5714(TE12L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,20V V(BR)CEO,4A I(C),SC-62
2SC5714_06	TOSHIBA	获取价格	Silicon NPN Epitaxial Type