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2SC5730 PDF预览

2SC5730

更新时间: 2024-09-24 22:40:03
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 49K
描述
Medium power transistor (30V, 1.0A)

2SC5730 数据手册

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2SC5730  
Transistor  
Medium power transistor (30V, 1.0A)  
2SC5730  
!External dimensions (Units : mm)  
!Features  
1) High speed switching. (Tf : Typ. : 35ns at I  
C
= 1.0A)  
2.8  
1.6  
TSMT3  
2) Low saturation voltage, typically  
(Typ. : 150mV at I  
C
= 500mA, I = 50mA)  
B
3) Strong discharge power for inductive load and  
capacitance load.  
(1) Base  
(2) Emitter  
(3) Collector  
4) Complements the 2SA2048  
Each lead has same dimensions  
0.3 0.6  
Abbreviated symbol : UM  
!Applications  
Small signal low frequency amplifier  
High speed switching  
!Structure  
NPN Silicon epitaxial planar transistor  
!Packaging specifications  
Package  
Code  
Taping  
TL  
Type  
Basic ordering unit  
(pieces)  
3000  
2SC5730  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
30  
30  
6
V
V
V
A
A
I
C
1
Collector current  
Power dissipation  
1
2
I
CP  
2
P
C
500  
mW  
Junction temperature  
Tj  
150  
°C  
°C  
Range of storage temperature  
Tstg  
55~+150  
1 Pw=10ms  
2 Each terminal mounted on a recommended land.  
1/3  

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