Datasheet > 2SC5727

2SC5727

更新时间： 2024-09-23 04:05:23

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
2页	48K
描述
SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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中文翻译

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技术参数
数据手册

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2SC5727 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SC5727 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

PRELIMINARY

2SC 5727

Notics:This is not a final specification.

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

Some parametric limits are subject to change. ꢀ

DESCRIPTION

OUTLINE DRAWING

Unit

：ｍｍ

ꢀ2SC5727 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for high frequency application.

ꢀ.

2.1

1.25

0.425

①

②

FEATURE

③

●High gain bandwidth product.

fT=10.0GHz

●High gain, low noise.

●Can operate at low voltage.

●Super mini package for easy mounting

APPLICATION

For TV tuners, high frequency amplifier , celluar phone system.

JEITA：SC-70

TERMINAL CONNECTER

①：BASE

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

Unit

②：EMITTER

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

③：COLLECTOR

1.5

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

125

T_j

＋125

-55～＋125

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Parameter

Symbol

Test conditions

Unit

Min

Max

1.0

250

Collector cut off current

Emitter cut off current

DC forward current gain

Gain bandwidth product

Collector output capacitance

Insertion power gain

ICBO

IEBO

hFE

V _CB=10V, I _E=0mA

μA

V _EB=1V, I _C=0mA

V _CE=3V, I _C=10mA

ꢀ30

V _CE=3V, I _E=10mA

10.0

0.7

13.0

1.4

GHz

Cob

V _CB=3V, I _E=0mA,f=1MHz

V _CE=3V, I _C=10mA,f=1GHz

V _CE=3V, I _C=5mA,f=1GHz

¦S21¦

10.0

Noise figure

ISAHAYA

ꢀELECTRONICSꢀCORPORATION

中文翻译

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